Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,585
Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 2,585
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 2,585 | € 12,92 |
25 - 45 | € 2,456 | € 12,28 |
50 - 120 | € 2,208 | € 11,04 |
125 - 245 | € 1,989 | € 9,94 |
250+ | € 1,891 | € 9,45 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si