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P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A

Номер на артикул на RS: 157-4580PМарка: DiodesZetex№ по каталога на производителя: ZVP2110A
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.77mm

Width

2.41mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.01mm

Детайли за продукта

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

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€ 0,608

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A
Изберете тип опаковка

€ 0,608

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Лента
50 - 95€ 0,608€ 3,04
100 - 495€ 0,471€ 2,36
500 - 995€ 0,413€ 2,07
1000+€ 0,375€ 1,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.77mm

Width

2.41mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.01mm

Детайли за продукта

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more