Cypress Semiconductor 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
Технически документи
Спецификации
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.978 x 3.987 x 1.478mm
Length
4.98mm
Width
3.987mm
Maximum Operating Supply Voltage
5.5 V
Height
1.478mm
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8bit
Страна на произход
Thailand
Детайли за продукта
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
2
P.O.A.
2
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.978 x 3.987 x 1.478mm
Length
4.98mm
Width
3.987mm
Maximum Operating Supply Voltage
5.5 V
Height
1.478mm
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8bit
Страна на произход
Thailand
Детайли за продукта
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products